R&D Semiconductor Chip Designer, Si and SiC Power Devices, Hitachi Energy, Chennai
Job Description
This power semiconductor device job in Chennai is an R&D post in Hitachi Energy Semiconductors. You will help develop next-generation silicon and SiC MOSFET and IGBT chips. You will build and use TCAD models to improve device performance, yield and cost.
At a glance
- Position: Semiconductor Chip Designer (full time, job ID R0126696); the body calls it R&D Semiconductor Chip Specialist
- Where: Chennai, Tamil Nadu, India
- Employer: Hitachi Energy Technology Services Private Limited
- Degree: Master’s or PhD in physics, electrical engineering or a related field, with a focus on semiconductor device physics
- Posted: 26 August 2026 (the date given in the posting)
- Apply: open until filled (re-checked 19 November 2026)
What the power semiconductor chip designer does
- Develop next-generation power chips, mainly Si and SiC MOSFET and IGBT devices
- Support the full cycle from concept and simulation to validation and reliability testing
- Apply and improve TCAD simulation models to understand devices and improve performance, yield and cost
- Work closely with process, characterisation and reliability teams
- Own work packages or sub-projects
- Improve designs through data analysis, modelling and optimisation
Why this role matters
Power chips switch the current in trains, wind turbines, solar inverters and electric cars. SiC chips lose less energy than silicon ones. Few companies design these devices in India. This role offers real device physics and TCAD work inside a global R&D team.
What Hitachi Energy is looking for
- Master’s or PhD in physics, electrical engineering or a related field, focused on semiconductor device physics
- Proven experience in power semiconductor device development, ideally with SiC power chips
- Strong hands-on experience with TCAD tools such as Sentaurus or COMSOL
- Good understanding of device physics, device characteristics and technology development
- Experience working with process, characterisation and reliability teams
- Good communication and teamwork
Nice to have
- Initial experience owning technical tasks or supervising junior staff
- Familiarity with process integration or modelling methods
Pay and location
The posting does not state pay. The role is based in Chennai. Workday shows it was posted more than 30 days ago, so apply soon.
How to apply
Apply through the official Hitachi Energy job posting. Hitachi Energy’s posting does not give a closing date, so the role is open until filled; ResearchJobs.in will re-check this listing on 19 November 2026. Check the posting for location and work-authorisation details before you apply.
See all our industry R&D jobs, or browse more research jobs on ResearchJobs.in.
Hiring institution: Hitachi Energy
Official advertisement: hitachi.wd1.myworkdayjobs.com
How to prepare for this application
- Prepare a TCAD study you ran: the device, the models you calibrated and what changed in the design
- Revise IGBT and MOSFET physics: on-state loss, switching loss, blocking voltage and short-circuit robustness
- Be ready to discuss SiC-specific issues, such as gate oxide reliability and threshold voltage drift
- Know the main reliability tests for power devices, such as HTRB, H3TRB and power cycling
- Think about how you would trade cell pitch against yield and cost in a new chip
About Hitachi Energy
Hitachi Energy is part of the Japanese Hitachi group and is based in Zurich, Switzerland. It makes grid equipment such as transformers, HVDC systems and switchgear. It also makes power semiconductors for industry, rail, renewable energy and e-mobility.
